EMG2DXV5T5G
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Dual NPN BJT, 50V, 100mA, SOT-553
Дополнительная информация
Dual NPN Bipolar Digital Transistor (BRT) in a compact SOT-553-5 package. Features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. Offers a low collector-emitter saturation voltage of 250mV and a minimum hFE of 80. Operates across a wide temperature range from -55°C to 150°C with 230mW power dissipation. This RoHS compliant and halogen-free component is supplied on an 8000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.3mm |
| Height | 0.6mm |
| Length | 1.7mm |
| hFE Min | 80 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-553-5 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 8000 |
| Power Dissipation | 230mW |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 230mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
