EPC2022
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Краткое описание:
100 V, 90 A eGaN® FET Enhancement Mode Power Transistor
Дополнительная информация
The EPC2022 is a 100 V enhancement-mode gallium nitride (GaN) power transistor designed for high-frequency switching and high power density applications. It features a very low drain-source resistance (RDS(on)), zero reverse recovery (QRR) charges, and exceptionally low input and output capacitances. Gallium Nitride's high electron mobility allows for high switching performance in a compact footprint.
| RoHS | Compliant |
| Die Size | 6.05 x 2.3mm |
| Halogen-free | Yes |
| Pulsed Drain Current | 390A |
| Total Gate Charge (QG) | 16nC |
| Operating Temperature Range | -40 to 150°C |
| Gate-to-Source Voltage (VGS) | 6V |
| Continuous Drain Current (ID) | 90A |
| Drain-to-Source Voltage (VDS) | 100V |
| Gate Threshold Voltage (VGS(TH)) | 0.8 - 2.5V |
| Drain-to-Source On Resistance (RDS(on)) | 3.2mΩ |
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