EPC2054
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Краткое описание:
200 V, 3.2 A, 240 mΩ N-Channel Enhancement Mode Power Transistor
Дополнительная информация
The EPC2054 is a high-performance enhancement-mode gallium nitride (GaN) power transistor designed for efficient power conversion in a small footprint. It features an ultra-low threshold, high switching frequency capabilities, and zero reverse recovery. It is specifically optimized for high-speed DC-DC conversion, wireless power transfer, and LiDAR applications.
| RoHS | Compliant |
| Dimension | 1.3 x 0.85mm |
| Lead-free | Yes |
| Halogen-free | Yes |
| Total Gate Charge (Qg) | 0.4nC |
| Gate-Source Voltage (VGS) | 6V |
| Operating Temperature Range | -40 to 150°C |
| Continuous Drain Current (ID) | 3.2A |
| Drain-to-Source Voltage (VDS) | 200V |
| Gate Threshold Voltage (VGS(th)) | 0.8 - 2.5V |
| Drain-Source On-Resistance (RDS(on)) | 240mΩ |
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