EPC2106
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Краткое описание:
Enhancement-Mode GaN Power Transistor Half-Bridge 100 V 1.7 A
Дополнительная информация
The EPC2106 is an eGaN IC featuring two enhancement-mode Gallium Nitride (GaN) power transistors monolithic in a half-bridge configuration. It utilizes lateral device structure and majority carrier diode properties to provide zero reverse recovery and ultra-low gate charge. The device is designed for high-frequency DC-DC conversion and Class-D audio applications where small footprint and high efficiency are required.
| RoHS | Compliant |
| Die Size | 1.35 x 1.35mm |
| Halogen-free | Yes |
| Total Gate Charge (QG) | 0.73nC |
| Input Capacitance (CISS) | 79pF |
| Operating Temperature (TJ) | -40 to 150°C |
| Gate-to-Source Voltage (VGS) | -4 to 6V |
| Continuous Drain Current (ID) | 1.7A |
| Drain-to-Source Voltage (VDS) | 100V |
| Drain-Source On Resistance (RDS(on)) | 70mΩ |
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