EPC2206
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Краткое описание:
80 V, 2.2 mΩ, 90 A Automotive eGaN® FET
Дополнительная информация
The EPC2206 is an enhancement mode Gallium Nitride (GaN) power transistor designed for high-performance power conversion applications. It features a drain-to-source voltage of 80 V and an exceptionally low on-resistance of 2.2 mΩ. As an eGaN FET, it offers zero reverse recovery (Qrr) and significantly lower gate charge than traditional silicon MOSFETs, enabling high switching frequencies and high efficiency in a compact die-level package. It is AEC-Q101 qualified for automotive applications.
| RoHS | Yes |
| Die Size | 6.05 x 2.3mm |
| Halogen Free | Yes |
| Total Gate Charge (Qg) | 19nC |
| Automotive Qualification | AEC-Q101 |
| Input Capacitance (Ciss) | 1940pF |
| Operating Temperature Range | -40 to 150°C |
| Gate-to-Source Voltage (VGS) | -4 to 6V |
| Continuous Drain Current (ID) | 90A |
| Drain-to-Source Voltage (VDS) | 80V |
| Pulsed Drain Current (ID pulsed) | 390A |
| Drain-Source On Resistance (RDS(on)) | 2.2mΩ |
| Gate-to-Source Threshold Voltage (VGS(th)) | 0.8 to 2.5V |
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