EPC2215
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Краткое описание:
200 V, 32 A Enhancement-Mode GaN Power Transistor
Дополнительная информация
The EPC2215 is a 200V gallium nitride (GaN) enhancement-mode power transistor designed for high-frequency power conversion. It offers approximately half the size of previous generation 200V eGaN devices while doubling performance benchmarks. These transistors feature very low gate charge, zero reverse recovery charge (QRR), and low on-state resistance (RDS(on)), making them suitable for Class-D audio, solar MPPTs, and high-density DC-DC converters.
| ECCN | EAR99 |
| RoHS | Compliant |
| Halogen-free | Yes |
| Total Gate Charge (QG) | 13.6 to 17.7nC |
| Output Capacitance (COSS) | 390 to 585pF |
| Operating Temperature Range | -40 to +150°C |
| Continuous Drain Current (ID) | 32A |
| Drain-to-Source Voltage (VDS) | 200V |
| Gate Threshold Voltage (VGS(th)) | 0.8 to 2.5V |
| Pulsed Drain Current (ID pulsed) | 162A |
| Drain-Source On Resistance (RDS(on)) | 8mΩ |
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