EPC2302
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Краткое описание:
GaN FET N-Channel 100V 101A 1.8mOhm 7-PowerWQFN
Дополнительная информация
The EPC2302 is a 100 V eGaN power transistor in a QFN package with an exposed top. It is designed for high efficiency and features a very low Rds(on) of 1.4 to 1.8 mOhms, facilitating high power density in space-constrained applications.
| RoHS | Compliant |
| Halogen-free | Yes |
| Gate Charge (Qg) Max | 23nC |
| Drain-Source Voltage (Vds) | 100V |
| Moisture Sensitivity Level | MSL1 |
| Operating Temperature Range | -40 to 150°C |
| Threshold Voltage (Vgs(th)) | 0.8 to 2.5V |
| Input Capacitance (Ciss) Max | 3200pF |
| Continuous Drain Current (Id) | 101A |
| Gate-Source Voltage (Vgs) Range | -4 to 6V |
| Drain-Source Resistance (Rds on) Max | 1.8mOhms |
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