ESH1DM RSG

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ESH1DM RSG - Taiwan Semiconductor
Краткое описание: Ultra Fast Recovery Rectifier, 1A, 200V, 15ns, Micro SMA
Производитель Taiwan Semiconductor
Категория Без категории
Статус производства Производится (ACTIVE)

Дополнительная информация

The ESH1DM RSG is a high-efficiency ultra-fast recovery rectifier featuring a 1.0 Ampere forward current and a reverse voltage rating of 200 Volts. It is designed with a glass passivated chip junction and offers an ultra-fast recovery time of 15ns for high-efficiency switching. The device is housed in a low-profile Micro SMA surface mount package, making it suitable for automated placement and high-density PCB layouts.
RoHS Compliant
Halogen-free According to IEC 61249-2-21
Maximum RMS Voltage 140V
Moisture Sensitivity Level MSL-1
Typical Junction Capacitance 15pF
Maximum Forward Voltage at 1A 0.95V
Maximum Reverse Recovery Time 15ns
Operating Junction Temperature Range -55 to +150°C
Maximum Repetitive Peak Reverse Voltage 200V
Maximum Average Forward Rectified Current 1.0A
Peak Forward Surge Current (8.3ms single half sine-wave) 30A