FC6946010R
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Краткое описание:
N-Channel JFET, 60V, 100mA, 2-Element, SOT-666
Дополнительная информация
N-Channel Silicon Junction Field-Effect Transistor (JFET) for small signal applications. Features 60V Drain to Source Breakdown Voltage (Vdss) and 100mA Continuous Drain Current (ID). Offers 6 Ohms Drain to Source Resistance (Rds On Max: 12 Ohms) and a Gate to Source Voltage (Vgs) of 12V. This surface mount device, housed in a SOT-666 package, operates within a temperature range of -55°C to 150°C and boasts a power dissipation of 125mW. Compliant with RoHS standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.5mm |
| Length | 1.6mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 12R |
| Nominal Vgs | 1.2V |
| Package/Case | SOT-666 |
| RoHS Compliant | Yes |
| Package Quantity | 8000 |
| Input Capacitance | 12pF |
| Power Dissipation | 125mW |
| Threshold Voltage | 1.2V |
| Turn-On Delay Time | 100ns |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6R |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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