FCA16N60N
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Краткое описание:
600V 16A N-Channel Power MOSFET, 199mR RdsOn, TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 16A continuous drain current. Offers a maximum drain-source on-resistance of 199mΩ at a nominal gate-source voltage of 4V. This single element transistor operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 134.4W. Packaged in a TO-3P through-hole mount, it boasts fast switching characteristics with a turn-on delay of 15.8ns and fall time of 20.2ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 20.1mm |
| Length | 15.8mm |
| Series | SupreMOS™ |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 20.2ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 199mR |
| Nominal Vgs | 4V |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 2.17nF |
| Power Dissipation | 134.4W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 15.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60.3ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 134.4W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 199mR |
| Drain to Source Breakdown Voltage | 600V |
