FCA35N60

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FCA35N60 - Onsemi
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Краткое описание: 600V 35A N-Channel Power MOSFET, 79mR Rds(on), TO-3P
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring SUPERFET® Easy Drive technology. 600V drain-source voltage (Vdss) with a continuous drain current (ID) of 35A. Low on-resistance (Rds On Max) of 98mΩ at 10Vgs. Designed for through-hole mounting in a TO-3P package, offering a maximum power dissipation of 312.5W. Operates across a wide temperature range from -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 5mm
Height 20.1mm
Length 15.8mm
Series SuperFET™
Weight 6.401g
Polarity N-CHANNEL
Fall Time 73ns
Packaging Rail/Tube
Rds On Max 98mR
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 6.64nF
Power Dissipation 312.5W
Threshold Voltage 3V
Turn-On Delay Time 34ns
Radiation Hardening No
Turn-Off Delay Time 105ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 312.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 79mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 650V