N-channel Power MOSFET featuring SUPERFET® Easy Drive technology. 600V drain-source voltage (Vdss) with a continuous drain current (ID) of 35A. Low on-resistance (Rds On Max) of 98mΩ at 10Vgs. Designed for through-hole mounting in a TO-3P package, offering a maximum power dissipation of 312.5W. Operates across a wide temperature range from -55°C to 150°C.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
5mm |
| Height |
20.1mm |
| Length |
15.8mm |
| Series |
SuperFET™ |
| Weight |
6.401g |
| Polarity |
N-CHANNEL |
| Fall Time |
73ns |
| Packaging |
Rail/Tube |
| Rds On Max |
98mR |
| RoHS Compliant |
Yes |
| Package Quantity |
30 |
| Input Capacitance |
6.64nF |
| Power Dissipation |
312.5W |
| Threshold Voltage |
3V |
| Turn-On Delay Time |
34ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
105ns |
| Reach SVHC Compliant |
No |
| Element Configuration |
Single |
| Max Power Dissipation |
312.5W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
79mR |
| Gate to Source Voltage (Vgs) |
30V |
| Continuous Drain Current (ID) |
35A |
| Drain to Source Voltage (Vdss) |
600V |
| Drain to Source Breakdown Voltage |
650V |