FCA36N60NF

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FCA36N60NF - Onsemi
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Краткое описание: 600V N-Channel MOSFET, 34.9A, 95mΩ, TO-3P
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 34.9A continuous drain current. Offers low on-resistance of 95mΩ at a nominal gate-source voltage of 3.7V. Designed with FRFET® and SuperFET® II technology for efficient switching, exhibiting a turn-on delay of 27ns and fall time of 4ns. Maximum power dissipation is 312W, with operating temperatures ranging from -55°C to 150°C. Packaged in a TO-3P through-hole mount, this RoHS compliant component is ideal for high-power applications.
RoHS Compliant
Mount Through Hole
Width 5mm
Height 20.1mm
Length 16.2mm
Series FRFET®, SuperFET® II
Weight 6.401g
Polarity N-CHANNEL
Fall Time 4ns
Packaging Rail/Tube
Rds On Max 95mR
Nominal Vgs 3.7V
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 4.245nF
Power Dissipation 312W
Threshold Voltage 3.7V
Turn-On Delay Time 27ns
Radiation Hardening No
Turn-Off Delay Time 92ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 312W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 80mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 34.9A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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