FCB20N60TM
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Краткое описание:
600V 20A N-Channel Power MOSFET, 190mR, D2PAK
Дополнительная информация
N-Channel Power MOSFET, SUPERFET™ series, featuring a 600V drain-source breakdown voltage and a continuous drain current of 20A. This surface-mount device in a D2PAK package offers a low 190mΩ drain-source on-resistance. Designed for easy drive applications, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 208W. Key switching characteristics include a 62ns turn-on delay and a 65ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 4.83mm |
| Series | SuperFET™ |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 190mR |
| Nominal Vgs | 5V |
| Package/Case | D2PAK |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 3.08nF |
| Power Dissipation | 208W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 62ns |
| Turn-Off Delay Time | 230ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 208W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190mR |
| Drain to Source Breakdown Voltage | 600V |
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