FCD5N60TM
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Краткое описание:
600V N-Ch MOSFET, 4.6A, 950mΩ RdsOn, DPAK
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.6A continuous drain current. This Easy Drive MOSFET offers a maximum drain-source on-resistance of 950mΩ and a power dissipation of 54W. Packaged in a DPAK surface-mount case, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 12ns turn-on delay and a 22ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | SuperFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Package/Case | DPAK |
| Current Rating | 4.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 600pF |
| Power Dissipation | 54W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 54W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 810mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 950MR |
| Drain to Source Breakdown Voltage | 600V |
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