FCH041N60F

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FCH041N60F - Onsemi
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Краткое описание: 600V 76A N-CH Power MOSFET, 41mΩ, TO-247
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, SUPERFET® II, FRFET® technology, 600V drain-source breakdown voltage, 76A continuous drain current, and 41mΩ drain-source resistance. Features a TO-247-3 package for through-hole mounting, with a maximum power dissipation of 595W. Operates across a wide temperature range from -55°C to 150°C, offering fast switching characteristics with turn-on delay of 63ns and fall time of 53ns. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.82mm
Height 20.82mm
Length 15.87mm
Series SuperFETII®
Weight 6.39g
Polarity N-CHANNEL
Fall Time 53ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 41mR
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 14.365nF
Power Dissipation 595W
Turn-On Delay Time 63ns
Radiation Hardening No
Turn-Off Delay Time 244ns
Element Configuration Single
Max Power Dissipation 595W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 36mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 76A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V