FCH22N60N

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FCH22N60N - Onsemi(onsemi)
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Краткое описание: 600V 22A N-Channel Power MOSFET TO-247
Производитель Onsemi(onsemi)
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 22A continuous drain current. This single element transistor offers a low 165mΩ Rds(on) and is housed in a TO-247 package for through-hole mounting. Key performance characteristics include a 4ns fall time and 1.95nF input capacitance, operating within a -55°C to 150°C temperature range with 205W maximum power dissipation. The device is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 5.03mm
Height 21mm
Length 15.95mm
Series SupreMOS™
Weight 6.39g
Polarity N-CHANNEL
Fall Time 4ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 165mR
Package/Case TO-247
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 1.95nF
Power Dissipation 205W
Threshold Voltage 3V
Turn-On Delay Time 16.9ns
Turn-Off Delay Time 49ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 205W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 140mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 22A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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