FCP11N60N
Производится
Увеличить
Краткое описание:
600V N-Channel Power MOSFET, 10.8A, 299mΩ, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 10.8A continuous drain current. This through-hole component offers a low 299mΩ drain-source on-resistance and 94W maximum power dissipation. Designed with a TO-220 package, it operates from -55°C to 150°C and includes fast switching characteristics with a 10ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 15.9mm |
| Length | 10.16mm |
| Series | SuperMOS™ |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 299mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 400 |
| Input Capacitance | 1.505nF |
| Power Dissipation | 94W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13.6ns |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 94W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 255mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10.8A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 380MR |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
