FCP13N60N
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Краткое описание:
600V 13A N-Channel Power MOSFET, TO-220, 258mR
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 13A continuous drain current. This SupreMOS™ device offers a low 258mΩ Rds(on) and 116W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it boasts fast switching characteristics with a 9.8ns fall time. Operating temperature range is -55°C to 150°C, and it is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.4mm |
| Length | 10.67mm |
| Series | SupreMOS™ |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 9.8ns |
| Packaging | Rail/Tube |
| Rds On Max | 258mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 400 |
| Input Capacitance | 1.765nF |
| Power Dissipation | 116W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 14.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 116W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 244mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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