FCP190N65F
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Краткое описание:
650V N-Ch MOSFET, 20.6A, 190mR, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source voltage and 20.6A continuous drain current. This single element transistor offers a low 190mΩ drain-source resistance and is housed in a TO-220 package for through-hole mounting. Key performance characteristics include a maximum power dissipation of 208W and an operating temperature range of -55°C to 150°C. The component is lead-free and RoHS compliant, with fast switching times including a 4.2ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 16.3mm |
| Length | 10.67mm |
| Series | FRFET®, SuperFET® II |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 4.2ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Rds On Max | 190mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 3.225nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 62ns |
| Element Configuration | Single |
| Max Power Dissipation | 208W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20.6A |
| Drain to Source Voltage (Vdss) | 650V |
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