N-Channel Power MOSFET featuring SUPERFET® II Easy Drive technology. 600V drain-to-source breakdown voltage and 10.2A continuous drain current. Low 380mΩ drain-to-source resistance. TO-220 package for through-hole mounting. 106W maximum power dissipation.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
4.83mm |
| Height |
9.4mm |
| Length |
10.67mm |
| Series |
SuperFET® II |
| Weight |
1.8g |
| Polarity |
N-CHANNEL |
| Fall Time |
10ns |
| Lead Free |
Lead Free |
| Packaging |
Rail/Tube |
| Rds On Max |
380mR |
| Package/Case |
TO-220 |
| RoHS Compliant |
Yes |
| Package Quantity |
400 |
| Input Capacitance |
1.77nF |
| Power Dissipation |
106W |
| Threshold Voltage |
2.5V |
| Turn-On Delay Time |
17ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
64ns |
| Reach SVHC Compliant |
No |
| Element Configuration |
Single |
| Max Power Dissipation |
106W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
380mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
10.2A |
| Drain to Source Voltage (Vdss) |
600V |
| Drain to Source Breakdown Voltage |
600V |