FCP380N60E

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FCP380N60E - Onsemi
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Краткое описание: 600V N-Channel Power MOSFET, 10.2A, 380mR, TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET featuring SUPERFET® II Easy Drive technology. 600V drain-to-source breakdown voltage and 10.2A continuous drain current. Low 380mΩ drain-to-source resistance. TO-220 package for through-hole mounting. 106W maximum power dissipation.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 9.4mm
Length 10.67mm
Series SuperFET® II
Weight 1.8g
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 380mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 400
Input Capacitance 1.77nF
Power Dissipation 106W
Threshold Voltage 2.5V
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 64ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 106W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 380mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10.2A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V