FCP600N60Z
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Краткое описание:
600V N-Ch MOSFET, 7.4A, 600mR, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring SUPERFET® II technology. 600V drain-source voltage (Vdss) with a 650V breakdown voltage. Continuous drain current (ID) of 7.4A and a maximum on-resistance (Rds On) of 600mΩ. Designed for through-hole mounting in a TO-220 package, offering a maximum power dissipation of 89W. Fast switching characteristics include a 28ns fall time and 13ns turn-on delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 16.51mm |
| Length | 10.67mm |
| Series | SuperFET® II |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 28ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.12nF |
| Power Dissipation | 89W |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Turn-Off Delay Time | 88ns |
| Element Configuration | Single |
| Max Power Dissipation | 89W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 650V |
