FCP9N60N

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FCP9N60N - Onsemi
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Краткое описание: 600V 9A N-Channel Power MOSFET TO-220
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 9A Continuous Drain Current, and 385mΩ Max Drain-Source Resistance. Features include a TO-220 package for through-hole mounting, 1.24nF input capacitance, and 2V threshold voltage. Operates across a wide temperature range from -55°C to 150°C with 83.3W max power dissipation. This RoHS compliant component offers fast switching speeds with a 10.2ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 9.4mm
Length 10.67mm
Series SuperMOS™
Weight 1.8g
Polarity N-CHANNEL
Fall Time 10.2ns
Packaging Rail/Tube
Rds On Max 385mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 400
Input Capacitance 1.24nF
Power Dissipation 83.3W
Threshold Voltage 2V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 12.7ns
Radiation Hardening No
Turn-Off Delay Time 36.9ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 83.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 330mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 9A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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