FCPF16N60NT
Производится
Увеличить
Краткое описание:
600V 16A N-Channel Power MOSFET, 199mR Rds(on), TO-220F
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 16A continuous drain current. Offers a maximum on-resistance of 199mΩ at a nominal gate-source voltage of 2V. Designed for through-hole mounting in a TO-220-3 package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 35.7W. Includes fast switching characteristics with turn-on delay time of 15.8ns and fall time of 20.2ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 15.9mm |
| Length | 10.16mm |
| Series | SupreMOS™ |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 20.2ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 199mR |
| Nominal Vgs | 2V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 2.17nF |
| Power Dissipation | 357W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 15.8ns |
| Turn-Off Delay Time | 60.3ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 35.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 199mR |
| Drain to Source Breakdown Voltage | 600V |
