FCPF190N60E
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Краткое описание:
N-Channel MOSFET, 600V, 20.6A, 190mR, TO-220F
Дополнительная информация
N-Channel Power MOSFET, SUPERFET® II series, featuring 600V drain-source voltage and 20.6A continuous drain current. This Easy Drive MOSFET offers a low 190mΩ drain-source resistance (Rds On Max) and a 2.5V threshold voltage. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 39W. Key switching characteristics include a 23ns turn-on delay and 40ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.9mm |
| Height | 9.19mm |
| Length | 10.36mm |
| Series | SuperFET® II |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 3.175nF |
| Power Dissipation | 39W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 23ns |
| Turn-Off Delay Time | 212ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 39W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20.6A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 650V |
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