FCPF22N60NT
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Краткое описание:
600V 22A N-Channel Power MOSFET, 165mΩ RdsOn, TO-220F
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 22A continuous drain current. Offers a low 165mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this single-element transistor boasts a 3V threshold voltage and fast switching speeds with a 4ns fall time. Maximum power dissipation is rated at 39W, operating from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 15.9mm |
| Length | 10.16mm |
| Series | SupreMOS™ |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 4ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 165mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.95nF |
| Power Dissipation | 39W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 16.9ns |
| Turn-Off Delay Time | 49ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 39W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 140mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 165mR |
| Drain to Source Breakdown Voltage | 600V |
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