FCPF36N60NT

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FCPF36N60NT - Onsemi
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Краткое описание: 600V N-Channel Power MOSFET, 36A, 81mR, TO-220F
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 36A Continuous Drain Current, and 81mΩ Drain to Source Resistance. Features a TO-220-3 package for through-hole mounting, with a maximum operating temperature of 150°C. This single-element MOSFET offers fast switching characteristics with a 4ns fall time, 23ns turn-on delay, and 94ns turn-off delay. RoHS compliant and packaged in a rail/tube for convenience.
RoHS Compliant
Mount Through Hole
Width 4.9mm
Height 16.07mm
Length 10.36mm
Series SupreMOS™
Weight 2.27g
Polarity N-CHANNEL
Fall Time 4ns
Packaging Rail/Tube
Rds On Max 90mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 4.785nF
Number of Elements 1
Turn-On Delay Time 23ns
Radiation Hardening No
Turn-Off Delay Time 94ns
Element Configuration Single
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 81mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 36A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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