FCPF380N60

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FCPF380N60 - Onsemi
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Краткое описание: 600V N-Channel MOSFET, 10.2A, 380mR, TO-220F
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring SUPERFET® II technology. 600V drain-source breakdown voltage and 10.2A continuous drain current. Low 380mΩ drain-source resistance. TO-220F package for through-hole mounting. Fast switching with 6ns fall time and 14ns turn-on delay. Maximum power dissipation of 31W.
RoHS Compliant
Mount Through Hole
Width 4.9mm
Height 9.19mm
Length 10.36mm
Series SuperFET® II
Weight 2.27g
Polarity N-CHANNEL
Fall Time 6ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 380mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 1.665nF
Power Dissipation 31W
Turn-On Delay Time 14ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 31W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 380mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10.2A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 650V

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