FCPF7N60NT
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Краткое описание:
600V 6.8A N-Channel Power MOSFET, 520mΩ, TO-220F
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 6.8A continuous drain current. Offers a maximum on-resistance of 520mΩ at 10Vgs. Designed for through-hole mounting in a TO-220-3 package, with a maximum power dissipation of 30.5W. Includes fast switching characteristics with turn-on delay time of 12ns and fall time of 12ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.9mm |
| Height | 16.07mm |
| Length | 10.36mm |
| Series | SupreMOS™ |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 520mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 960pF |
| Power Dissipation | 30.5W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 30.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 460mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 600MR |
| Drain to Source Breakdown Voltage | 600V |
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