FCPF9N60NT
Производится
Увеличить
Краткое описание:
600V 9A N-Channel Power MOSFET TO-220F
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 9A continuous drain current. This single-element transistor offers a low 385mΩ drain-source on-resistance and is housed in a TO-220F package for through-hole mounting. Key performance characteristics include a 12.7ns turn-on delay, 36.9ns turn-off delay, and 10.2ns fall time. Maximum power dissipation is 29.8W, with operating temperatures ranging from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 15.9mm |
| Length | 10.16mm |
| Series | SuperMOS™ |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 10.2ns |
| Packaging | Rail/Tube |
| Rds On Max | 385mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.24nF |
| Power Dissipation | 29.8W |
| Number of Channels | 1 |
| Turn-On Delay Time | 12.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36.9ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 29.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 330mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
