FCX1047ATA
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NPN BJT Transistor, 4A I(C), 10V V(CE), 150MHz, SOT-89, SM
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a continuous collector current of 4A and a collector emitter breakdown voltage of 10V. Offers a maximum power dissipation of 2W and a transition frequency of 150MHz. Packaged in a SOT-89 surface mount case, this component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 150MHz |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 10V |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 4A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 4A |
| Collector Base Voltage (VCBO) | 35V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Saturation Voltage | 350mV |
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