FCX1149ATA
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 3A I(C), 25V V(CE), 135MHz, SOT-89
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-89 package for surface mounting. Features a continuous collector current of -3A and a collector-emitter breakdown voltage of 25V. Offers a gain bandwidth product of 135MHz and a maximum power dissipation of 2W. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| Polarity | PNP |
| Frequency | 135MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 135MHz |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -25V |
| Package Quantity | 1000 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 135MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 3A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 135MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -3A |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -230mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
