FCX555TA
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PNP BJT Transistor, 180V, 700mA, 100MHz, SOT-89
Дополнительная информация
PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 180V collector-emitter breakdown voltage and a maximum collector current of 700mA. Offers a transition frequency of 100MHz and a maximum power dissipation of 2.1W. Packaged in a SOT-89 (TO-243AA) surface-mount case, this component is lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-243AA |
| Current Rating | -700mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -180V |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 180V |
| Max Collector Current | 700mA |
| Max Power Dissipation | 2.1W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Collector Base Voltage (VCBO) | -180V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Breakdown Voltage | 180V |
| Collector Emitter Saturation Voltage | -400mV |
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