FCX589TA

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FCX589TA - Diodes
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Краткое описание: PNP BJT Transistor, 30V VCEO, 1A IC, 100MHz, SOT-89
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Continuous Collector Current. Operates with a -5V Emitter-Base Voltage (VEBO) and a 100MHz Transition Frequency. Packaged in a SOT-89 surface mount case, this RoHS compliant component offers 1W maximum power dissipation and a 150°C maximum operating temperature.
RoHS Compliant
Mount Surface Mount
Width 2.5mm
Height 1.5mm
Length 4.5mm
Weight 0.001834oz
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-89
Current Rating -1A
RoHS Compliant Yes
DC Rated Voltage -30V
Package Quantity 1000
Power Dissipation 1W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 30V
Max Collector Current 1A
Max Power Dissipation 1W
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -1A
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 650mV
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage -650mV

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