FCX617TA
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 3A I(C), 15V V(CE), 120MHz, SOT-89, SM
Дополнительная информация
NPN silicon bipolar junction transistor in SOT-89 package, featuring a 3A continuous collector current and 15V collector-emitter breakdown voltage. This surface-mount device offers a 120MHz gain bandwidth product and a maximum power dissipation of 2W. Operating temperature range is -55°C to 150°C, with a 4A current rating. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Frequency | 120MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 15V |
| Package Quantity | 1000 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 3A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 120MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 3A |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 150mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
