FCX789ATA
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PNP BJT Transistor, 3A I(C), 25V V(BR)CEO, 100MHz f(T), SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -3A and a collector-emitter breakdown voltage of 25V. Offers a transition frequency of 100MHz and a maximum power dissipation of 2W. Packaged in a TO-243AA surface mount case, this lead-free component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-243AA |
| Current Rating | -3A |
| DC Rated Voltage | -25V |
| Package Quantity | 1000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 3A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -3A |
| Collector Base Voltage (VCBO) | -25V |
| Collector-emitter Voltage-Max | 320mV |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -250mV |
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