FDA18N50
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Краткое описание:
500V 19A N-Channel Power MOSFET, 265mR RdsOn, TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 19A continuous drain current. Offers a maximum on-resistance of 265mΩ at a 10V gate-source voltage. This single-element transistor boasts a maximum power dissipation of 239W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 55ns turn-on delay and 90ns fall time. Packaged in a TO-3P through-hole mount.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 18.9mm |
| Length | 15.8mm |
| Series | UniFET™ |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 265mR |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 2.86nF |
| Power Dissipation | 239W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 55ns |
| Turn-Off Delay Time | 95ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 239W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 265mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 265MR |
| Drain to Source Breakdown Voltage | 500V |
