FDA28N50F
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Краткое описание:
500V 28A N-Channel Power MOSFET, 175mR, TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 28A continuous drain current. Offers 175mΩ drain-source resistance (Rds On) and 310W maximum power dissipation. This single element transistor operates within a temperature range of -55°C to 150°C and is packaged in a TO-3P through-hole mount. Key switching characteristics include a 67ns turn-on delay and 101ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 20.1mm |
| Length | 15.8mm |
| Series | UniFET™ |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 101ns |
| Packaging | Rail/Tube |
| Rds On Max | 175mR |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 5.387nF |
| Power Dissipation | 310W |
| Turn-On Delay Time | 67ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 192ns |
| Element Configuration | Single |
| Max Power Dissipation | 310W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 175mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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