FDA50N50
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Краткое описание:
500V 48A N-Channel Power MOSFET 105mR TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 48A continuous drain current. This UniFET™ device offers a low 105mΩ drain-to-source resistance and a maximum power dissipation of 625W. Designed for through-hole mounting in a TO-3P package, it operates within a temperature range of -55°C to 150°C. Key switching parameters include a 105ns turn-on delay and 225ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.8mm |
| Height | 19.9mm |
| Length | 15.6mm |
| Series | UniFET™ |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 230ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 105mR |
| Current Rating | 48A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 30 |
| Input Capacitance | 6.46nF |
| Power Dissipation | 625W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 105ns |
| Turn-Off Delay Time | 225ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 625W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 105mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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