FDA69N25
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N-Channel Power MOSFET, 250V, 69A, 41mR, TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 69A continuous drain current. This UniFET™ device offers a low 41mΩ drain-to-source resistance and a maximum power dissipation of 480W. Designed for through-hole mounting in a TO-3P package, it operates from -55°C to 150°C and is RoHS compliant. Key switching parameters include a 95ns turn-on delay and 220ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 20.1mm |
| Length | 15.8mm |
| Series | UniFET™ |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 220ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 41mR |
| Current Rating | 69A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 250V |
| Package Quantity | 30 |
| Input Capacitance | 4.64nF |
| Power Dissipation | 480W |
| Number of Elements | 1 |
| Turn-On Delay Time | 95ns |
| Turn-Off Delay Time | 130ns |
| Element Configuration | Single |
| Max Power Dissipation | 480W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 41mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 69A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain to Source Breakdown Voltage | 250V |
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