FDA70N20
Производится
Увеличить
Краткое описание:
200V 70A N-Channel Power MOSFET, 35mR RdsOn, TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and a continuous drain current of 70A. This UniFET™ device offers a low 35mΩ drain-source on-resistance and a maximum power dissipation of 417W. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 71ns and fall time of 39ns. Packaged in a TO-3P (450-TUBE) for through-hole mounting, this RoHS compliant component is designed for high-power applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 20.1mm |
| Length | 15.8mm |
| Series | UniFET™ |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 39ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 35mR |
| Nominal Vgs | 5V |
| Current Rating | 70A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 30 |
| Input Capacitance | 3.97nF |
| Power Dissipation | 417W |
| Threshold Voltage | 5V |
| Turn-On Delay Time | 71ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 417W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 35MR |
| Drain to Source Breakdown Voltage | 200V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
