FDB035N10A

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FDB035N10A - Onsemi
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Краткое описание: N-Channel MOSFET 100V 214A 3.5mR D2PAK
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, 100V Drain-Source Breakdown Voltage, 214A Continuous Drain Current, 3.5mΩ Max Drain-Source On Resistance. This surface mount device features a D2PAK package, 333W max power dissipation, and operates from -55°C to 175°C. Includes 22ns turn-on delay, 37ns turn-off delay, and 11ns fall time. Packaged on an 800-piece tape and reel, this RoHS compliant component offers lead-free construction.
RoHS Compliant
Mount Surface Mount
Width 9.65mm
Height 4.83mm
Length 10.67mm
Series PowerTrench®
Weight 1.31247g
Polarity N-CHANNEL
Fall Time 11ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.5mR
Package/Case D2PAK
RoHS Compliant Yes
Package Quantity 800
Input Capacitance 7.295nF
Power Dissipation 333W
Turn-On Delay Time 22ns
Radiation Hardening No
Turn-Off Delay Time 37ns
Element Configuration Single
Max Power Dissipation 333W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 214A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 3.5MR
Drain to Source Breakdown Voltage 100V