FDB047N10
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Краткое описание:
N-Channel Power MOSFET, 100V, 120A, 4.7mR, D2PAK, SM
Дополнительная информация
N-Channel Power MOSFET, D2PAK package, 100V Drain-Source Breakdown Voltage, 164A continuous drain current, and 4.7mΩ drain-source on-resistance. Features include 375W maximum power dissipation, 175°C maximum operating temperature, and 800 units per tape and reel packaging. This surface-mount device offers fast switching characteristics with turn-on delay of 174ns and fall time of 244ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 11.33mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | PowerTrench® |
| Weight | 1.762g |
| Polarity | N-CHANNEL |
| Fall Time | 244ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.7mR |
| Nominal Vgs | 3.5V |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 15.265nF |
| Power Dissipation | 375W |
| Threshold Voltage | 3.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 174ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 344ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 375W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.7MR |
| Drain to Source Breakdown Voltage | 100V |
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