FDB060AN08A0

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FDB060AN08A0 - Onsemi
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Краткое описание: N-Ch MOSFET 75V 80A 6mR TO-263-3 SMT
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, 75V Drain-Source Voltage, 80A Continuous Drain Current, and 6mΩ Max Drain-Source On-Resistance. Features a TO-263-3 surface mount package, 255W maximum power dissipation, and operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 38ns. This RoHS compliant component is supplied on an 800-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 11.33mm
Height 4.83mm
Length 10.67mm
Series PowerTrench®
Weight 1.31247g
Polarity N-CHANNEL
Fall Time 38ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 6mR
Package/Case TO-263-3
Current Rating 80A
RoHS Compliant Yes
DC Rated Voltage 75V
Package Quantity 800
Input Capacitance 5.15nF
Power Dissipation 255W
Turn-On Delay Time 19ns
Radiation Hardening No
Turn-Off Delay Time 37ns
Element Configuration Single
Max Power Dissipation 255W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 4.8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 75V
Drain-source On Resistance-Max 6MR
Drain to Source Breakdown Voltage 75V

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