FDB15N50
Производится
Увеличить
Краткое описание:
500V 15A N-Channel Power MOSFET, 380mR, D2PAK, Tape & Reel
Дополнительная информация
N-Channel Power MOSFET, 500V Drain to Source Breakdown Voltage, 15A Continuous Drain Current, and 380mΩ Maximum Drain-Source On-Resistance. This single-element transistor features a TO-263 (D2PAK) surface-mount package, 300W maximum power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 9ns turn-on delay and 5ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 11.33mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 380mR |
| Nominal Vgs | 3.4V |
| Package/Case | TO-263 |
| Current Rating | 15A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 800 |
| Input Capacitance | 1.85nF |
| Power Dissipation | 300W |
| Threshold Voltage | 3.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 330mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 380mR |
| Drain to Source Breakdown Voltage | 500V |
