FDB2572

Производится
FDB2572 - Onsemi
Увеличить
Краткое описание: N-Channel MOSFET 150V 29A 54mR TO-263AB
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, PowerTrench® series, featuring 150V drain-source breakdown voltage and 29A continuous drain current. Offers a maximum drain-source on-resistance of 54mΩ at 10Vgs. Designed for surface mounting in a TO-263AB package, this single-element transistor operates from -55°C to 175°C with a maximum power dissipation of 135W. Includes fast switching characteristics with a 11ns turn-on delay and 14ns fall time. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 11.33mm
Height 4.83mm
Length 10.67mm
Series PowerTrench®
Weight 1.31247g
Polarity N-CHANNEL
Fall Time 14ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 54mR
Package/Case TO-263AB
Current Rating 29A
RoHS Compliant Yes
DC Rated Voltage 150V
Package Quantity 1
Input Capacitance 1.77nF
Power Dissipation 135W
Number of Elements 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 31ns
Element Configuration Single
Max Power Dissipation 135W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 45mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 29A
Drain to Source Voltage (Vdss) 150V
Drain-source On Resistance-Max 54MR
Drain to Source Breakdown Voltage 150V