FDB2614
Производится
Увеличить
Краткое описание:
N-Ch MOSFET 200V 62A 27mR TO-263 SMD
Дополнительная информация
N-Channel MOSFET, PowerTrench® series, featuring 200V drain-source breakdown voltage and 62A continuous drain current. Offers a low 27mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. Designed for surface mounting in a TO-263 package, this single-element transistor boasts a maximum power dissipation of 260W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 77ns and fall time of 162ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 11.33mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | PowerTrench® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 162ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 27mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | TO-263 |
| Current Rating | 62A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 7.23nF |
| Power Dissipation | 260W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 77ns |
| Dual Supply Voltage | 200V |
| Turn-Off Delay Time | 103ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 260W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22.9mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 27MR |
| Drain to Source Breakdown Voltage | 200V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
