FDB3632
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Краткое описание:
100V 80A N-CH MOSFET, 9mΩ Rds On, TO-263AB, SMT
Дополнительная информация
N-Channel PowerTrench® MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. Offers a low 9mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. Designed for surface mount applications in a TO-263AB package, this single-element MOSFET boasts a maximum power dissipation of 310W and operates across a wide temperature range of -55°C to 175°C. RoHS compliant and lead-free, it is supplied on an 800-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | PowerTrench® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 46ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | TO-263AB |
| Current Rating | 44A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 800 |
| Input Capacitance | 6nF |
| Power Dissipation | 310W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 96ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 310W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 9MR |
| Drain to Source Breakdown Voltage | 100V |
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