FDB3682

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FDB3682 - Onsemi
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Краткое описание: N-Ch MOSFET, 100V, 32A, 36mR, TO-263, SM
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power Trench® MOSFET, 100V Vds, 32A ID, 36mΩ Rds On Max. This single-element MOSFET features a TO-263 surface mount package, 95W power dissipation, and operates from -55°C to 175°C. Key electrical characteristics include a 4V threshold voltage, 1.25nF input capacitance, and fast switching times with 9ns turn-on and 26ns turn-off delays. It is RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 11.33mm
Height 4.83mm
Length 10.67mm
Series PowerTrench®
Weight 1.31247g
Polarity N-CHANNEL
Fall Time 32ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 36mR
Package/Case TO-263
Current Rating 32A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 1
Input Capacitance 1.25nF
Power Dissipation 95W
Threshold Voltage 4V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 9ns
Turn-Off Delay Time 26ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 95W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 32mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 32A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 36MR
Drain to Source Breakdown Voltage 100V

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