FDB44N25TM

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FDB44N25TM - Onsemi
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Краткое описание: N-Channel MOSFET, 250V, 44A, 69mR, D2PAK, Surface Mount
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, UniFET™ series, featuring a 250V drain-source breakdown voltage and a continuous drain current of 44A. This surface-mount component offers a low drain-source on-resistance of 69mΩ at a nominal gate-source voltage of 5V. Designed for high power applications, it boasts a maximum power dissipation of 307W and operates within a temperature range of -55°C to 150°C. The D2PAK package is supplied on an 800-piece tape and reel, with RoHS compliance.
RoHS Compliant
Mount Surface Mount
Width 11.33mm
Height 4.83mm
Length 10.67mm
Series UniFET™
Weight 1.31247g
Polarity N-CHANNEL
Fall Time 115ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 69mR
Nominal Vgs 5V
Package/Case D2PAK
Current Rating 44A
RoHS Compliant Yes
DC Rated Voltage 250V
Package Quantity 800
Input Capacitance 2.87nF
Power Dissipation 307W
Threshold Voltage 5V
Number of Elements 1
Turn-On Delay Time 55ns
Radiation Hardening No
Turn-Off Delay Time 85ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 307W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 69mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 44A
Drain to Source Voltage (Vdss) 250V
Drain-source On Resistance-Max 69mR
Drain to Source Breakdown Voltage 250V

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