FDB6030BL
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Краткое описание:
30V 40A N-CH MOSFET, 18mR Rds On, 60W, SMT
Дополнительная информация
N-CHANNEL Power Field-Effect Transistor, R-type package, 30V Drain to Source Breakdown Voltage, 40A Continuous Drain Current, 18mΩ Drain to Source Resistance. Features 1.16nF Input Capacitance, 8ns Fall Time, and 23ns Turn-Off Delay Time. Operates from -65°C to 175°C with 60W Max Power Dissipation. Surface mount, tape and reel packaging.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Series | PowerTrench® |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Nominal Vgs | 1.6V |
| Termination | SMD/SMT |
| Package/Case | R |
| Current Rating | 40A |
| DC Rated Voltage | 30V |
| Package Quantity | 800 |
| Input Capacitance | 1.16nF |
| Power Dissipation | 60W |
| Dual Supply Voltage | 30V |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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